Dolphin0606FDI production is a fixed type and low noise x-ray flat panel detector based on CMOS. CMOS sensors use a single crystal silicon process for chip fabrication. Direct integral amplification within pixel cells leads to lower electronic noise, higher signal-to-noise ratio, and higher quantum detection efficiency (DQE) than amorphous silicon, so CMOS sensors are particularly suitable for low-dose imaging scenarios. Based on above characteristics, Dolphin0606FDI detector can be widely used in industrial SMT, electronics, lithium battery and chip wire bonding inspection.
Electronic noise is lower
Higher signal-to-noise ratio
Technology |
|
Sensor |
CMOS |
Scintillator |
CSI |
Active Area |
60 x 53.5 mm |
Pixel Matrix |
1200 x 1056 |
Pixel Pitch |
50 μm |
AD Conversion |
14 bits |
Interface |
|
Communication Interface |
Optical Fiber |
Exposure Control |
Pulse Sync In (Edge or Level) / Pulse Sync Out (Edge or Level) |
Work Mode |
Software Mode / HVG Sync Mode / FPD Sync Mode |
Frame Speed |
51fps (1x1) |
Operating System |
Windows7 / Windows10 OS 32 bits or 64 bits |
Technical Performance |
|
Resolution |
10.0 lp/mm |
Energy Range |
40~160 KV |
Lag |
0.01% @1st frame |
Dynamic Range |
≥ 73dB |
Sensitivity |
100 lsb/uGy |
SNR |
48 dB @(20000lsb) |
MTF |
90% @(1 lp/mm) |
82% @(2 lp/mm) |
|
74% @(3 lp/mm) |
|
DQE (2uGy) |
65% @(0 lp/mm) |
48% @(1 lp/mm) |
|
37% @(2 lp/mm) |
|
Mechanical |
|
Dimension(H x W x D) |
171 x 171 x 37 mm |
Weight |
2.8 Kg |
Sensor Protection Material |
Carbon Fiber |
Housing Material |
Aluminum Alloy |
Environmental |
|
Temperature Range |
10~35°℃ (operating); -10~50℃(storage) |
Humidity |
30~70% RH(non-condensing) |
Vibration |
IEC/EN 60721-3 class 2M3(10~150 Hz,0.5 g) |
Shock |
IEC/EN 60721-3 class 2M3(11 ms,2 g) |
Dust and Water Resistant |
IPX0 |
Power |
|
Supply |
100~240 VAC |
Frequency |
50/60 Hz |
Consumption |
6 W |
Application |
|
Industrial |
SMT, Electronics, Lithium Battery Chip Wire Bonding Inspection |
Mechanical Dimension |
|